2SD777 transistor equivalent, silicon npn transistor.
. Excellent Vide Safe Operating Area (100 W-S at Tc=25°C).
. Included Abalanche Diode. : Vz=55±10V
. High D.C Current Gain. : hFE >500
. High Collector Power Dissipation.
FEATURES:
. Excellent Vide Safe Operating Area (100 W-S at Tc=25°C).
. Included Abalanche Diode. : Vz=55±10V
. High D.C.
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